发明名称 MODIFYING METHOD OF FILM TO BE TREATED AND ITS DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a modifying method of a film by which the modification can be efficiently performed and electric breakdown characteristics of the film can be improved by using not only UV rays but also IR rays as the modification light source. SOLUTION: When the objective film consisting of one of metal oxide film, metal film and metal nitride film formed on the surface of the objective body W is to subjected to modification, the film is irradiated with modification rays 54 including UV rays UV and IR rays IR in the presence of a modification gas. Thereby, not only UV rays but also IR rays can be used as modification rays and therefore, the modification treatment can be efficiently performed and the dielectric breakdown characteristics can be improved.
申请公布号 JP2000087247(A) 申请公布日期 2000.03.28
申请号 JP19980274353 申请日期 1998.09.10
申请人 TOKYO ELECTRON LTD 发明人 JINRIKI HIROSHI;SUGIURA MASAHITO
分类号 H01L21/316;C23C16/48;C23C16/56;H01L21/31;(IPC1-7):C23C16/56 主分类号 H01L21/316
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