| 摘要 |
PURPOSE: The method is to fabricate a semiconductor device having a semiconductor chip(14) attached to a heat sink plate(10) by intervening a adhesion layer(12) having good reliability as to endurance and maintaining the heat dispersion property. CONSTITUTION: The semiconductor chip is glued through the adhesion layer having total thickness of 80 micrometers constructed in a stacked structure of a 50 micrometer thermoplastic film adhesion layer(12a) and a 30 micrometer paste adhesion layer(12b). The material of the thermoplastic film adhesion layer is made by mixing an alumina fine powder to a polyolefin adhesion resin, and the material of the paste adhesion layer is made by mixing a silver powder to an epoxy adhesion resin. The reliability of the endurance is increased because the stress concentration generated on the adhesion layer is relieved and the heat dispersion property is maintained. |
