发明名称 ELECTRON EMISSION ELEMENT, ELECTRON SOURCE AND IMAGE FORMING DEVICE AND MANUFACTURE OF ELECTRON EMISSION ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To enhance an electrical heat-resistance temperature by providing an under coating film containing SiO2 as main component and also containing bismuth oxide particles on a surface contacting with a conductive thin film of a platinum group element on a substrate. SOLUTION: A substrate 1 in which SiO2 is laminated on a glass plate in which an impurity content is reduced is washed and an under coating film 6 of a SiO2 film is formed on a surface contacting with a fine particle film 4 by a coating.immersing method and a droplet of a solution using a liquid coating agent containing a Bi compound. Element electrodes 2, 3 are provided thereon and an organic metal solution is applied thereon to form a film and it is subjected to patterning to obtain the fine particle film 4. If a space between the element electrodes 2, 3 is energized, a portion having a structure change, i.e., an electron emission portion 5 is formed by destroying, deforming or modifying the fine particle film 4. When a pulse voltage is applied thereto, electron emission is not caused if the voltage is an electron emission threshold value or less and when the voltage having the threshold value or more is applied thereto, an electron beam is outputted. At this time, an output electron beam strength can be controlled by varying a peak value of the pulse.</p>
申请公布号 JP2000082384(A) 申请公布日期 2000.03.21
申请号 JP19980254347 申请日期 1998.09.08
申请人 CANON INC 发明人 NAKAMURA HISAMI
分类号 H01J9/02;H01J1/316;H01J29/04;H01J31/12;(IPC1-7):H01J1/316 主分类号 H01J9/02
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