Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon

摘要

A method of processing semiconductor materials, including providing a monocrystalline silicon substrate having a (001) crystallographic surface orientation; off-cutting the substrate to an orientation from about 2 DEG to about 6 DEG offset towards the [110] direction; and epitaxially growing a relaxed graded layer of a crystalline GeSi on the substrate. A semiconductor structure including a monocrystalline silicon substrate having a (001) crystallographic surface orientation, the substrate being off-cut to an orientation from about 2 DEG to about 6 DEG offset towards the [110] direction; and a relaxed graded layer of a crystalline GeSi which is epitaxially grown on the substrate.