发明名称 FORMATION OF PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a resist composition capable of giving a pattern in which a change in the line width is low, while maintaining high sensitivity even when a recycled developing solution is used. SOLUTION: A resist pattern is formed by using a positive-type resist composition of formula 10<= [b/(a+b)]&times;100}<=23 and a recycled developing solution, wherein (a) is the amount (parts by weight) of an alkaline-soluble phenol resin, (b) is the amount (parts by weight) of a naphthoquinonediazide sulfonate ester, the alkaline-soluble phenol resin is obtained by the reaction of phenols containing p-cresol in an amount of >=50 wt.% and aldehydes and the naphthoquinonedizaide sulfonate ester is 1, 2-naphthoquinonediazide-5-sulfonate ester of polyhydroxybenzophenone.
申请公布号 JP2000081700(A) 申请公布日期 2000.03.21
申请号 JP19990181575 申请日期 1999.06.28
申请人 NIPPON ZEON CO LTD 发明人 KASHIWAGI MOTOFUMI;KUSUNOKI TETSUAKI;TOGO MASAMI
分类号 H01J9/02;G02F1/13;G03F7/022;G03F7/023;H01J9/227;H01J11/22;H01J11/34;H01J11/36;H01J11/42;H01L21/027 主分类号 H01J9/02
代理机构 代理人
主权项
地址