Method for forming a polyoxide film on doped polysilicon by anodization

摘要

The present invention relates to a method for forming a polyoxide film on a doped polysilicon layer, which is suitable for use as an inter-polysilicon polyoxide film between a doped polysilicon floating gate and a doped polysilicon control gate. The method includes conducting an electrolytic reaction at a room, temperature such that a polyoxide layer is formed on a doped polysilicon layer acting as an anode. The polyoxide layer is preferably further subjected with a rapid thermal processing to improve its electrical characteristics.