NEW PHOTORESIST POLYMER AND A COMPOSITION USING THE NEW PHOTORESIST POLYMER

摘要

PURPOSE: A new photoresist polymer and a composition using the new photoresist polymer are provided, as suitable for the optical lithography using a light source of far ultraviolet ray domain, especially the source of ArF(193mm). CONSTITUTION: The new photoresist polymer and a composition using the new photoresist polymer provides: a compound of the chemical formula 2 that l is 1¯2; a compound of the chemical formula 3 that R1 and R2 are hydrogen or a substituted or non-substituted linear or branched-chain alcohol of carbon 1¯10, and m is 1¯2; a compound of the chemical formula 4 that R is hydrogen or a substituted or non-substituted linear or branched-chain alcohol of carbon 1¯10; and a maleic anhydride copolymer of the chemical formula 5. Thereby, it is possible to provide the great etching-resistant photoresist composition using the new copolymer having a good adhesiveness with the substrate.