| 摘要 |
PURPOSE: A method for driving a non-volatile memory with a split gate type and method for driving a semiconductor memory having the memory cell is provided, which resolves a program disturbance and endurance characteristic problem. CONSTITUTION: The method for driving a non-volatile memory with a split gate type comprises the steps of: providing a first voltage to first and second regions (12, 14), providing a high voltage to a control gate (26), and providing a voltage which is lower than the first voltage to a substrate (10) to perform a removing operation; providing the high voltage to a second regions (14), providing the first voltage to the first region (12), providing the second voltage to the control gate (26) and providing a voltage which is lower than the first voltage to a substrate (10) to perform a program operation; providing the first voltage to the second region (14), providing a read voltage to the first region (12) and providing a reference voltage to the control gate (26), and providing the first voltage to the substrate (10) to perform a read operation. Thereby, it is possible to the reliability of the device.
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