发明名称 |
Ohmic electrode structure for InxGa1-xAs layer |
摘要 |
An ohmic electrode structure is produced by developing an InxGa1-xAs layer epitaxially on a compound semiconductor (n-Ga As), and providing a barrier layer composed of a tungsten nitride (high melting point metallic nitride) by sputtering. Then, electrode patterning is performed on the top of the tungsten nitride barrier layer by the photo-resist technique. After the process, unnecessary portion of the tungsten nitride barrier layer is removed by the reactive ion etching (RIE). On the top of this a Ti layer, a Pt layer and an Au layer are deposited in layers in that order by the lift-off technique to form a metal layer. Here, molybdenum nitride or titanium nitride may be used in place of tungsten nitride.
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申请公布号 |
US6037663(A) |
申请公布日期 |
2000.03.14 |
申请号 |
US19930121794 |
申请日期 |
1993.09.15 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAGURA, MOTOJI;KOMINAMI, MASANORI;KINOSADA, TOSHIAKI;YOSHIKAWA, KOKEN;TWYNAM, JOHN KEVIN |
分类号 |
H01L29/43;H01L21/28;H01L29/45;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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