High-voltage generator for word lines of a bank-activated semiconductor memory device

摘要

A semiconductor memory device operates at a high speed by applying high-voltage used for driving word lines in accordance with an activated state of a bank by using a high-voltage circuit controlled for each bank or by inserting control circuits in each output stage of the high-voltage circuit in the memory device adopting a number of banks. The memory device includes a high-voltage generation circuit that includes a number of unit high-voltage generation circuits that output a high-voltage of the same level, and a multi-bank circuit that includes a number of unit bank circuits driven independently in response to the high-voltage signal of a corresponding unit high-voltage generation circuit, a corresponding row decoder output signal and a corresponding column decoder output signal.