METHOD AND APPARATUS FOR MANUFACTURING EPITAXIALLY GROWN SEMICONDUCTOR WAFER HAVING PROTECTIVE LAYER

摘要

PROBLEM TO BE SOLVED: To manufacture an epitaxially grown silicon wafer having a protective layer and having a smaller number of particles than a conventional state of the art and less metal pollution. SOLUTION: The method includes steps of a) feeding a semiconductor wafer from a central purest chamber 1 into an epitaxy reactor 2, b) depositing one or more epitaxy layers on the wafer in the epitaxy reactor 2, c) moving the epitaxially grown semiconductor wafer into the central purest chamber 1, d) feeding the epitaxially grown semiconductor wafer into an oxidizing furnace 3 or a CVD coating reactor and causing the wafer to be subjected to surface oxidization or chemical vapor deposition in the oxidizing furnace or CVD coating reactor to manufacture a protective layer thereon, and e) moving the epitaxially grown semiconductor wafer having the protective layer into the central purest chamber 1.