| 摘要 |
<p>A plasma etcher (100) for semiconductor wafers (W) generates plasma in a space between a susceptor (3) and a showerhead (4). A shield material (11) for preventing deposition of reaction products is provided detachably inside a sidewall (1b) of a processing chamber (1). The light emitted from the plasma is led outside the processing chamber (1) through a window device (12). The window device (12) includes a window plate (21) made of quartz mounted airtightly on the sidewall (1b) of the processing chamber (1). The window device (12) also includes a light guide (22) made of aluminum with a lot of minute through holes (22a) to lead the plasma light to the window plate (21) and a cover plate (23) made of sapphire to cover through holes (22a) between the window plate (21) and the light guide (22). The light guide (22) and the cover plate (23) are mounted on the shield material (11).</p> |
