发明名称 CELL DATA SENSING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A cell data sensing circuit of semiconductor memory device is provided to stably make operation of circuit and improve confidence of a semiconductor memory device. CONSTITUTION: The circuit comprises a memory cell data detector for detect a sensing signal according to a data stored in a memory cell, a reference signal generator for generating two reference signal stored in two or more reference cells connected in serial, and a comparator for receiving the sensing signal from the memory cell data detector and the reference signal from the reference signal generator and comparing the sensing signal with the reference signal. The data stored in the memory cell is detected by the signal outputted from the comparator.
申请公布号 KR20000012867(A) 申请公布日期 2000.03.06
申请号 KR19980031412 申请日期 1998.08.01
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 YANG, GYU SEOK
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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