METHOD FOR FORMING METAL LINE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming metal line layer of semiconductor device is provided to selectively remove a dregs of silicon does not removed in a metal line layer forming process. CONSTITUTION: A metal line contained a silicon is formed on a silicon substrate. A photoresist pattern having a window for exposing a metal line to be removed is formed. The exposed metal line is etched using an aluminum etching liquid. A silicon dregs remained on the metal line is etched using a polysilicon etching liquid. The exposed metal line is etched using a dry etching process. And the photoresist pattern is removed.