| 摘要 |
PROBLEM TO BE SOLVED: To easily form fine contact holes to be connected with the impurity region of a substrate by preventing damages to the substrate, and to reduce the contact resistance. SOLUTION: An element isolation layer 4, gate electrode 3, and oxide film 2 on the upper side face are formed on the surface of a silicon substrate 1, and an impurity region 8 is formed. Next, a metal film 5 is formed over the entire face. Then, a resist mask 6 is selectively formed on the metal film 5. Next, the metal film 5 is etched by using the resist mask 6 as am etching mask so that the impurity area 8 is not exposed, and electrode 53 constituted of a metallic floor 52 and a metallic pole 51 on the floor is formed. The metallic floor 52 is formed so that the entire face of the impurity region 8 is covered. Then, an inter-layer insulating film 7 is formed on the entire surface face. Then, the interlayer insulating film 7 is etched, causing the metallic pole 51 to be exposed. Then, on-metal wiring 54 connected with the metallic pole 51 is selectively formed on the interlayer insulating film 7.
|
