ELECTRO-OPTIC DEVICE, DRIVING SUBSTRATE FOR ELECTRO-OPTIC DEVICE AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To make it possible to embody a display panel of high image quality, high accuracy, narrower picture frame, high efficiency and large screen by forming a single crystal semiconductor layer, such as a single crystal silicon layer, on a first substrate including differences in level and constituting at least active elements on this single crystal semiconductor layer. SOLUTION: The differences 4 in level formed on the substrate 1 are formed as a sheet and the single crystal semiconductor layer, such as the single crystal silicon thin film layer 7 by graphoepitaxy, is formed thereon by deposition of the single crystal silicon from a low melting metal layer 6A formed by melting polycrystalline silicon, amorphous silicon or silicon. Such device is used for at least the active elements among the active elements and passive elements, such as top gate type MOSFETs of the peripheral driving circuit of an electro- optic device, such as a display section and the peripheral driving circuit integrated type LCD. As a result, the production of the electro-optic device, such as a thin-film semiconductor device for display contg. a high-performance driver, etc., is made possible and the display panel may be embodied by using this device.