| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a pattern by the electron beam exposure whereby the graphic deformation due to the proximity effect can be avoided, without needing the dimensional correction of an exposure graphic accompanying complicated simulation calculations. SOLUTION: A design graphic 11 is exposed on a resist-coated mask by the electron beam exposure. Between the design graphic 11 and auxiliary graphic 14 obtd. by applying the undersizing process of 0.1μm to the design graphic 11, an XOR-treated second exposure graphic 15 is exposed. Thus only the exposure part near the end of the design graphic 11 is additionally exposed to correct the internal proximity effect.
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