| 摘要 |
PROBLEM TO BE SOLVED: To reduce the base running time of electrons to improve the operating speed. SOLUTION: In a bipolar transistor using an SiGe mixed crystal layer as a base, the Ge compsns. of an emitter-base junction region and base-collector junction region which is adjacent the base layer are made higher than the Ge compsn. of the base layer. The smaller the diffusion coefficient of B in the SiGe layer is the higher the Ge compsn. is. Hence the diffusion of B from the base layer can be suppressed by making higher the Ge compsns. of the emitter- base junction region and base-collector junction region, which sandwich the base layer than the Ge compsn. of the base layer. |
