| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for producing a phase-shift mask capable of preventing charge-up of a resist and excellent in the precision in resist- patterning, which is applicable for producing a substrate etching-type Levenson- type phase-shift mask. SOLUTION: The process for producing a phase-shift mask is comprised of the steps of, forming a device pattern and an earth pattern by patterning a light shielding film 2 formed on a substrate 1, then connecting the device pattern with the earth pattern by a connecting light shielding pattern having a narrow line width than the resolution limit line width, after coating the substrate 1 with a resist film 3, forming a resist pattern by patterning the resist film 3 using an electron beam while allowing the earth pattern to earth, and finally etching the substrate 1 using the resist pattern as a mask.</p> |
