发明名称 CMOS semiconductor circuit for generating high output voltage
摘要 A semiconductor circuit for generating a high output voltage which includes: a first dividing circuit connected to a first fixed voltage and a second dividing circuit connected to second fixed voltage lower than the first fixed voltage, each dividing circuit having a plurality of stages for dividing an input voltage, a total number of the stages being sufficient to ensure that individual voltage drops across the stages, respectively, do not exceed a channel breakdown voltage for a predetermined transistor technology; a pull-up circuit, connected to the first dividing circuit, for pulling up an output voltage to a first predetermined level, the pull-up circuit having a plurality of modules sufficient in number to ensure that individual voltage changes across the modules, respectively, do not exceed the breakdown voltage; a pull-down circuit, connected to the second dividing circuit, for pulling down the output voltage to a second predetermined level, the pull-down circuit having a plurality of modules sufficient in number to ensure that individual voltage drops across the modules, respectively, do not exceed the breakdown voltage; a first control circuit for enabling or disabling operation of the pull-up circuit based upon at least one voltage from the first voltage dividing circuit; and a second control circuit for disabling or enabling the pull-down circuit, respective to the first control circuit, based upon at least one voltage from the second voltage dividing circuit.
申请公布号 US6031395(A) 申请公布日期 2000.02.29
申请号 US19980081300 申请日期 1998.05.20
申请人 LG SEMICON CO., LTD. 发明人 CHOI, JEONG-AE;KIM, KYU-TAE
分类号 H03K19/0185;H03K19/003;H03K19/0175;(IPC1-7):H03K19/094;H03K19/20 主分类号 H03K19/0185
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