发明名称 Apparatus for controlling etch rate when using consumable electrodes during plasma etching
摘要 A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate of etching when using consumable electrodes. Consumable electrode materials are used to increase selectivity in certain plasma etching processes as in via. contact. or in SOG etch. A consumable electrode material has a significant effect on processing time due to changing gap dimension between electrodes. This invention teaches how to adjust for process variables by using feedback from two strategically placed pressure manometers.
申请公布号 US6030489(A) 申请公布日期 2000.02.29
申请号 US19990345355 申请日期 1999.07.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HWANG, YUAN-KO
分类号 H01J37/32;H01L21/3065;H01L21/311;(IPC1-7):C23F1/02;C23C16/00 主分类号 H01J37/32
代理机构 代理人
主权项
地址