发明名称 |
ALUMINA SPUTTERING TARGET, ITS PRODUCTION AND HIGH- FREQUENCY SPUTTERING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an alumina sputtering target of high purity for accelerating the film forming rate of an alumina film on a substrate by sputter discharge and moreover hard to be cracked even in the case high electric power is applied. SOLUTION: An alumina sputtering target 5 is composed of an alumina sintered body having 5 to 20μm average crystal particle size and 0.3 to 1.5 porosity. As to this target, a compacted body is produced without adding magnesium to alumina raw material powder, and this compacted body is sintered at 1650 to 1750 deg.C.
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申请公布号 |
JP2000064034(A) |
申请公布日期 |
2000.02.29 |
申请号 |
JP19980233291 |
申请日期 |
1998.08.19 |
申请人 |
TOSHIBA CERAMICS CO LTD |
发明人 |
MIYAZAKI AKIRA;MORITA TAKASHI;NAGASAKA SACHIYUKI |
分类号 |
C23C14/08;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/08 |
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