发明名称 ALUMINA SPUTTERING TARGET, ITS PRODUCTION AND HIGH- FREQUENCY SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an alumina sputtering target of high purity for accelerating the film forming rate of an alumina film on a substrate by sputter discharge and moreover hard to be cracked even in the case high electric power is applied. SOLUTION: An alumina sputtering target 5 is composed of an alumina sintered body having 5 to 20μm average crystal particle size and 0.3 to 1.5 porosity. As to this target, a compacted body is produced without adding magnesium to alumina raw material powder, and this compacted body is sintered at 1650 to 1750 deg.C.
申请公布号 JP2000064034(A) 申请公布日期 2000.02.29
申请号 JP19980233291 申请日期 1998.08.19
申请人 TOSHIBA CERAMICS CO LTD 发明人 MIYAZAKI AKIRA;MORITA TAKASHI;NAGASAKA SACHIYUKI
分类号 C23C14/08;C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/08
代理机构 代理人
主权项
地址