| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual gate CMOS semiconductor device, wherein the boron punch-through of a PMOS element and a short channel effect of an NMOS element are suppressed. SOLUTION: A dual-gate CMOS semiconductor device comprises a silicon semiconductor substrate 101, a P-well 102 and an N-well 103 formed on the silicon semiconductor substrate 101 respectively, a field oxide film 104 formed on the P-well 102 and the N-well 103, an NMOS transistor formed on the P-well 102, and a PMOS transistor formed on the N-well 103. The film thickness of a gate electrode 106a of an NMOS type element is smaller than that of a gate electrode 106b of a PMOS type element. The film thickness of the gate electrode 106a is 50-250 nm, while that of the gate electrode 106b is 100-350 nm. The film thickness of the gate electrode 106b is 1.5 times that of the gate electrode 106a or larger.
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