METHOD AND DEVICE FOR FORMING MULTI-CRYSTAL THIN FILM

摘要

PURPOSE: A multi-crystal thin film having a good quality is provided so that the particle diameter of the crystal is big and the defects and the twin crystal of the crystal is less. CONSTITUTION: The process for forming the multi-crystal thin film is composed of the steps of: forming a semiconductor thin film on a substrate(14); melting the semiconductor thin film in the area where gas ventilates by ventilating the heated gas on the semiconductor while examining an energy beam on the semiconductor and forming the multi-crystal film by crystallize the semiconductor thin film in the process of solidifying. The speed of solidifying the melted semiconductor thin film can be reduced by ventilating the high temperature-inactive gas on a pulse and examining the laser beam on the pulse.