| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of a crack on an interlayer interface in multilayer structure, and to achieve superior optical characteristics, by adding an element being different from a III-group nitride semiconductor to a part near an interface where the lattice constant of a lower layer is larger than that of the upper layer out of two adjacent layers in the multilayer structure with higher concentration as compared with other parts. SOLUTION: In a semiconductor light-emitting device with multilayer structure, a III-group nitride semiconductor (AlxGa1-x)1-yIny (0<=x<=1, 0<=y<=1) with a composition ratio being different each other is successively laminated on a substrate 1. An element being different from the III-group nitride semiconductor is added to a part near an interface where the lattice constant of a lower layer is larger than that of the upper layer out of two adjacent layers in the multilayer structure with higher concentration as compared with other parts, thus relieving the deformation due to the mismatching of a lattice by transformation being introduced by three-dimensional growth that arises at the beginning of the film formation of the upper layer, preventing a crack from occurring after the upper layer is shifted from the three-dimensional growth to a two-dimensional one, and hence obtaining the semiconductor element with superior optical characteristics. |
