SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to improve an electric contact rate of a conductive film and a semiconductor element and to prevent a conductive film composing element from spreading toward the substrate. CONSTITUTION: The semiconductor device is produced in; step 1, forming an element separating film(12) on the substrate(11) made of P type silicon and forming a gate insulation film(13) on overall the substrate(11); and step 2, piling up a polysilicon film on overall the gate insulation film(13) and forming a gate electrode(1) by patterning the piled up polysilicon film, forming a drain area(15) and a source area(16) by injecting an arsenic(As) or a phosphorus(P) to produce a MOSS transistor(17).