| 摘要 |
PURPOSE: A semiconductor device is provided to prevent the leakage current in the end of a gate electrode on a drain of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) having a gate electrode made up of tungsten, and so on. CONSTITUTION: The semiconductor device manufacturing method comprises the steps of: forming a gate electrode made up of tungsten film(8) on the upper part of the gate oxidization film(10) on a silicon substrate(1); forming a diffusion layer(6) around the surface of the silicon substrate; forming a silicon oxidization film(5) onto the surface of the gate electrode as well as onto the silicon substrate; Herein, the thickness of the gate oxidization film is formed to be 1.4 - 3.0 times of the thickness of the central film. Thereby, the field concentration on the boundary of the gate end having drain area is relieved, and the leakage current is effectively prevented.
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