THIN FILM TRANSISTOR, ITS MANUFACTURE, AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a TFT which is large and uniform in a crystal particles size in a polycrystal silicon film which is an active layer and great in laser energy margin, and a display device capable of obtaining a superior display. SOLUTION: A gate electrode 11 composed of chrome, a gate insulated film 12, and an amorphous silicon film 13 are laminated on a glass substrate 10, and a 700Åthick coating film 14 is formed on the amorphous silicon 13 and upwardly of the gate electrode 11. Thereafter, an excimer laser is radiated to polycrystallize, thereby forming a TFT provided with the polycrystal silicon film as an active layer 13.