| 摘要 |
PROBLEM TO BE SOLVED: To find the sheet resistance value of the diffusion layer of a MOSFET. SOLUTION: Characteristics about currents Ids and gate voltages Vgs of MOSFETs having diffused layers of different lengths are measured at every MOSFET under a fixed drain voltage Vds (S1). Then the characteristics about the values obtained by dividing the drain voltage Vds by the currents Ids, namely, a drain-source resistances Rtot and the voltages VGs are obtained from measured data (S2). In addition, the characteristics about a functions g(Vgs) obtained by differentiating the resistance Rtot by the voltages Vgs and the voltages Vgs are obtained (S3). Moreover, the shift amountsΔi of the graphs of all test devices when the graphs are roughly made coincident with each other are found (S4). Then the graphs are shifted by the amountsΔi, based on the characteristics about the resistance Rtot and voltages Vgs (S5). Finally, a straight line is found by plotting the graph of various diffused layer lengths at a certain voltage Vgsc, and the sheet resistance of the diffusion layers are found from the inclination of the line (S6).
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