| 摘要 |
PROBLEM TO BE SOLVED: To provide an excimer laser annealing system for forming a polycrystalline semiconductor film with high uniformity by eliminating beam intensity distribution due to diffraction of line beam. SOLUTION: The excimer laser annealing system for shaping excimer laser light through an optical system into a line beam 12 and irradiating the surface 15 of an amorphous semiconductor film on an insulating film with the line beam 12 while scanning to fuse and crystallize the amorphous semiconductor film is provided with a beam length varying means, i.e., a shielding body 21. The shielding body 21 is inserted into the non-imaging face of beam light path and provided with a slit 22 obliquely to the long axis direction of a plurality of line beams 12 having different length before imaging. Since an image is formed on the surface 15 of the amorphous semiconductor film with line beams 12 of different length, fluctuation in the intensity distribution due to diffraction of a plurality of line beams is eliminated.
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