NONVOLATILE MEMORY CELL AND ARRAY THEREOF

摘要

PURPOSE: A cell structure is provided to offer the record margin improved more than the MTJ memory cell, the lower record current and smaller sized cell. CONSTITUTION: The cell comprises: a substrate(21); a diode(22) formed in the substrate and including n type zone and p type zone; a first conductive line formed onto the substrate and electrically connected to the n type zone of the diode; a magnetic tunnel junction device formed onto the first conductive line; a bypass electric conductor to electrically connect the p type zone of the diode to the magnetic tunnel junction device; and a second conductive line formed on the magnetic tunnel junction device and connected thereto electrically.