| 摘要 |
PROBLEM TO BE SOLVED: To provide a non volative semiconductor memory device which keeps a small erasing block and a rapid responsiveness and has a long-time reliability, and also provide a method for manufacturing such a device. SOLUTION: When writing data in a memory 15, a selection gate 8, a drain diffused layer 2, and a source diffusion layer 13 are applied with positive bias, a source diffused layer 3 is grounded, and an erasing gate 9 is opened. By applying relatively large positive bias to the drain diffused layer 2 side, hot electrons generated in a channel region on the drain diffused layer 2 side are injected into a floating gate 5. In this method for injection using hot electrons, a thicker gate oxide film than in FN tunneling can be used even at the same potential. When erasing the data, the electrons are pulled away from the floating gate 5 into an eraser gate 9 by applying the eraser gate 9 with positive bias and the selection gate 8 with 0V or a negative bias and opening the other terminals.
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