| 摘要 |
<p>A furnace (10, 20) for processing semiconductor wafers (11, 21) including an insulating enclosure (19), a first heating apparatus (15) disposed centrally with respect to the insulating enclosure, a frame (35) operative to support a multiplicity of semiconductor wafers in a nearly vertical orientation in at least one right polyhedronal tier about and facing the first centrally disposed heating apparatus, a double-walled quartz enclosure (23, 24) for enclosing the wafers which is operative to enable the wafers to be processed in a predetermined controlled environment, and a second heating apparatus (17) disposed between the quartz enclosure and the insulating enclosure arranged, together with the first heating apparatus, for substantially uniform heating of the wafers.</p> |
