ALUMINIUM LAYER ETCHING METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of etching an aluminum layer is provided to make temperature control unnecessary by effectively removing the aluminium layer on a high temperature using a tetramethyl ammonium hydroxide dilute solution as an etchant. CONSTITUTION: The method comprises the steps of filling a chemical bath of a wet station with tetramethyl ammonium hydroxide having a concentrate of 1 to 20 weight percent; depositing a wafer in the chemical bath under high temperature and atmospheric pressure, wherein an aluminum layer is formed in the wafer. Using tetramethyl ammonium hydroxide as an etchant, the aluminium layer is effectively etched at a high temperature.