| 摘要 |
PURPOSE: A wet oxidation apparatus is provided to improve a quality of the oxidized film by delaying a growing speed of wet oxide layer using an inert gas. CONSTITUTION: The wet oxidation apparatus comprises a reaction chamber(102) having a first gas inlet(72) and a second gas inlet(75) and forming an oxide layer on a wafer; a burner(52) having a first and a second injection openings(27, 26) and exhausting the injected gas to the first gas inlet(72); a hydrogen gas supplying pipeline(14) connected to the first injection opening(27) and an oxygen gas supplying pipeline(12) connected to the second injection opening(26); a first inert gas supplying pipeline(10) for supplying the inert gas to the burner(52) and controlling by a gas flow controller(42a) and connected to the second injection opening(26); and a second inert gas supplying pipeline(11) connected to the second gas inlet(75) and controlled by a gas flow controller(42e).
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