SILICIDE LAYER FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a silicide layer is provided to secure uniformity and security of semiconductor devices by controlling reaction of a cobalt layer and a silicon substrate layer. CONSTITUTION: The method comprises the steps of forming a field oxide layer on a device isolation layer of a semiconductor substrate and sequentially depositing and selectively patterning a gate insulating layer and a material layer for forming a gate on an active region defined by the field oxide layer to form a gate electrode layer; forming a gate sidewall on a sidewall of the gate electrode layer; implanting ions into the gate electrode including the gate sidewall using the gate electrode layer as a mask to form a source/drain region; sequentially depositing a cobalt layer and a titanium layer to form a silicon cobalt layer using a first thermal process; removing the cobalt layer and the titanium layer, wherein the cobalt layer and the titanium layer are not reacted by the gate sidewall; and forming a disilicon cobalt layer using a second thermal process.