SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: The method solves the difficulty of proceeding process and reduces the cell area, by preventing the contact between metal lines using a polysilicon thin film resistor(204) instead of a diffusion resistor at the point where a first metal line(208) and a second metal line(210) cross vertically each other. CONSTITUTION: The method reduces the cell area by comprising the processes of: forming a first insulating film(202) on a semiconductor substrate(200); forming the polysilicon thin film resistor on a region of the first insulating film; forming a second insulating film(206) comprising a contact hole(h) to reveal the surfaces of both edges of the polysilicon thin film resistor, on the polysilicon thin film resistor and the first insulating film; and forming the first metal line on the second insulating film by etching a conductive film selectively formed on the second insulating film including the contact hole, and forming the second metal line to be connected with the polysilicon resistor through the contact hole on the second insulating film.