FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a dynamic random access memory(DRAM) is provided to directly contact a bit line with a pad electrode layer without a bit line contact hole. CONSTITUTION: The method comprises the steps of forming an active region and a device isolation region on a semiconductor substrate; forming a transistor composed of a gate electrode and source/drain regions, wherein the gate electrode is formed by inserting a gate insulating layer onto the active region and the source/drain regions are mutually separated by the gate electrode; depositing an insulating layer on the above resultant and anisotropically etching the insulating layer to expose the source/drain region; depositing a first conductive layer on the above resultant and etching the first conductive layer to form a first pad electrode layer contacted with the exposed drain region and a second pad electrode contacted with the exposed source region; forming an interlayer insulating film on the above resultant; etching the first interlayer insulating film to expose partial surfaces of the first and the second pad electrode layers; and depositing a second conductive layer on the above resultant and etching the second conductive layer to form a bit line directly contacted with the exposed first pad electrode layer.