TRENCH ISOLATING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUITS

摘要

PURPOSE: A trench isolating method is provided to prevent a formation of recessed groove formed at edge portion of the isolation layer by using a flowable oxide pattern as isolating insulator. CONSTITUTION: The method comprises the steps of forming a trench by etching a semiconductor substrate(11) using a mask pattern(18); growing a thermal oxide(19) to recover the damaged substrate(11) at sidewalls and bottom portion of the trench; filling a flowable oxide pattern(21a) into the trench; removing the mask pattern(18) using wet-etchant and simultaneous deforming the flowable oxide pattern(21a) to a deformed flowable oxide pattern(21b) having a recessed groove formed at edge portion(B) thereof; and annealing the deformed flowable oxide pattern(21b), thereby forming an isolating oxide pattern(21c) covered the recessed groove.