FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a storage node contact plug is provided to make etching depth and diameter of a storage node contact window shallow and short, respectively. CONSTITUTION: The method comprises the steps of sequentially forming a first to a fourth insulating layers on an overall surface of a semiconductor substrate having buried contact plugs; sequentially etching the fourth and the first insulating layers down to surfaces of the buried contact plugs to form first contact holes on the buried contact plugs; forming a photoresist pattern on the fourth insulating layer including the first contact holes; sequentially etching the fourth and the third insulating layers using the photoresist pattern as a mask to form second contact holes between the first contact holes and on the second insulating layer; and filling the first and the second contact holes with conductive material after removal of the photoresist pattern.