| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple method by which a semiconductor light emitting element for which the interface state density at its end face can be suppressed stably over a long period. SOLUTION: A method for manufacturing a semiconductor light emitting element having such a resonator structure that compound semiconductor layers containing a first-conductivity clad layer, a active layer, and a second- conductivity clad layer are provided on a substrate includes a step of forming the end face of a resonator after the compound semiconductor layers are successively grown into crystals on the substrate, a process of forming a first inactivated layer 14-1, a step of irradiating the layer 14-1 with plasma, and a step of forming a second inactivated layer 14-2 on the first inactivated layer 14-1 irradiated with the plasma.
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