| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferrodielectric capacitor capable of exhibiting the improved performance, by improving the crystallinity of a ferrodielectric material as well as the manufacture thereof. SOLUTION: A capacitor lower electrode 110, multilayer dielectric films 112, 113 containing relatively more Ti component than Zr component on the upper part and a capacitor upper electrode 114 are successively formed on the first insulating film 106 on a semiconductor substrate 100 so as to form a capacitor. Next, a material layer 116 for avoiding the diffusion of a capacitor composing material is formed on the capacitor as if wrapping the capacitor. Through these capacitor and manufacture thereof, the concentration ratio of Zr content and Ti content can be evenly distributed, thereby making feasible of improving the crystallinity of the ferrodielectric. |
