| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic field sensor, capable of surely controlling, in a desirable direction, individual magnetization of an exchange bias layer of each of four bridge-connected macro-magnetoresistance effect elements, and a manufacturing method as well as a manufacturing device. SOLUTION: A first macro-magnetoresistance effect element 31 and a second macro-magnetoresistance effect element 32 are provided along a first straight line L1 with magnetization of pinned magnetic layers (c) directed in a fixed direction, while a third macro-magnetoresistance effect element 33 and a fourth macro-magnetoresistance effect element 34 are provided along a second straight line L2 parallel to the first straight line L1 with magnetization of pinned magnetic layers directed in the 180 deg. reverse direction to the direction of magnetization of the pinned magnetic layers of the first and second macro- magnetoresistance effect elements.
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