发明名称 DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND DRYING DEVICE THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate with superior drying property by fixing recovery time, regardless of the fluctuations of processing capacity and also fixing the exposure time of an object to be processed, based on it. SOLUTION: This drying method is an IPA(isopropyl alcohol) drying method for exposing only the object to be processed or the object to be processed and a dummy member in the saturated vapor of an organic solvent, and the exposure time in the saturated vapor is constituted of the recovery time of the saturated steam and the additional time and is fixed, regardless of the fluctuations in the capacity of the object to be processed. This drying device is provided with a processing tank 2 for processing the object 7 to be processed or an object to be processed and the dummy member 10, an evaporation means 6 for heating and evaporating the organic solvent 8 and forming the saturated vapor 9, a recovery means 3 for cooling, liquefying and recovering the rising saturated vapor 9, a transfer means 4 capable of holding and transferring the object to be processed and a tray 5 for recovering the organic solvent from the surface of the object to be processed. It is desirable to separately provide a tray 12 for recovering the organic solvent from the surface on the lower part of the dummy member 10.
申请公布号 JP2000036481(A) 申请公布日期 2000.02.02
申请号 JP19980203051 申请日期 1998.07.17
申请人 SUMITOMO METAL IND LTD 发明人 MANAKO KAZUYOSHI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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