| 摘要 |
Adhesion of a copper film, such as a copper interconnect, to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk copper layer under predetermined conditions that maximize throughput. Alternatively, the adhesion promotion techniques can avoid the formation of an interface by graduated deposition of a first material and copper. |
