| 摘要 |
PROBLEM TO BE SOLVED: To reduce a cost of a semiconductor light emitting element whose consumption power and operating voltage are low. SOLUTION: A titanium nitride layer 12 is formed on a low resistance substrate 11 composed of silicon. An N-type semiconductor region 14 composed of gallium nitride, an active layer 15 composed of gallium indium nitride and a P-type semiconductor region 16 composed of gallium nitride are formed in order on the titanium nitride layer 12. An anode electrode 18 is formed on the P-type semiconductor region 16, and a cathode electrode 19 is formed on the low resistance substrate 11. |
