DEFECT EVALUATION OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide the defect evaluation of semiconductor substrate capable of easily evaluating the pin hole defect distribution in a wide range on the whole surface of the substrate by detecting the pin hole defect in an embedded oxide film formed inside the substrate using SIMOX(separation by implanted oxygen) process. SOLUTION: The pin hole defects 4 themselves are the silicon status wherein embedded oxide film is not formed of oxygen not implanted with ions. At this time, a thermal oxide film 5 is removed using HF solution and then etched away using TMAH solution so that the regions not formed of a surface silicon active film 3 and an embedded oxide film 2 may be etched away to make etch pits 6 thereby making it possible to observe the etch pits 6 as pin hole defects.