| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a capacitor of a semiconductor device, by which a capacitor electrode having a desired shape can be formed with high yield, through a simple process. SOLUTION: In a method for forming a capacitor of a semiconductor device, a first insulating film 3 is formed on a silicon substrate 2 and contact plugs 4 are formed in the insulating film 3. Then an etching stop layer 5 and a second insulating film 6 are formed on the film 3 and trenches (square pipe-like recessed sections) 7 are formed by patterning the second insulating film 6. After forming the trenches 7, a polysilicon film 8 which becomes the lower electrode of the capacitor is formed on the trenches 7, and a positive lower-layer photoresist film 50 is formed on the film 8 covering the entire surface of the substrate 2. Then the film 50 is baked and a positive upper-layer photoresist film 52 having high light transmittance is formed on the film 50. Thereafter, the upper and lower-layer photoresist films 52 and 50 on the polysilicon film 8 are removed, except those in the trench region so that the film 50 is left in the trenches by exposing and developing the films 50 and 52. Finally, a pipe-like lower electrode is formed by exposing the polysilicon film 8 in the trenches. |
