| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor bulk acoustic resonator(SBAR) whose operation characteristic is improved. SOLUTION: An SBAR 20 is constituted to suppress a lateral direction propagation acoustic wave mode. The lateral direction acoustic wave mode can be controlled by reducing the reflection of a lateral acoustic mode in an electrode edge part which returns to an electrode region, by changing lateral direction dimensions of resonator electrodes 26, 28 and/or by using viscoelastic acoustic attenuation material like viscoelastic material of polyimide or the like, along at least a part of the periphery of the electrodes 26, 28. |
