| 摘要 |
PROBLEM TO BE SOLVED: To prevent voids from being generated in a trench isolation film which isolates elements from each other and to micronize the trench isolation film so as to enhance a semiconductor device in degree of integration. SOLUTION: The angle of inclination of an element isolation trench provided to a semiconductor substrate such as an SOI substrate or the like is set at an angle of 88 degrees or 89 degrees, and an insulating material where NSG(non- doped silicate glass) or HTO(high-temperature oxide film) and NSG are laminated is grown and buried in the trench. A trench isolation film where voids are prevented from being generated can be formed and enhanced in insulation isolation characteristics, especially in insulation isolation withstand voltage, and on the other hand, a trench isolation film where a trench opening is small in width can be formed. A semiconductor device which is kept high in dielectric strength shortening a distance between elements can be designed, a trench isolation film can be reduced in space factor itself, and as a result, a semiconductor device high in the breakdown voltage and enhanced in degree of integration can be manufactured.
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